Effects of carrier concentration in the back and front channels of Hf-In-Zn-O thin film transistors

W. J. Maeng, Joon Seok Park, Hyun Suk Kim, Tae Sang Kim, Kyoung Seok Son, Kyung Bae Park, Kwang Hee Lee, Eok Su Kim, Yong Nam Ham, Myungkwan Ryu, Sang Yoon Lee

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Abstract

The effects of carrier concentrations in the front and back channels were comparatively studied in Hf-In-Zn-O thin film transistors by controlling the concentration of In. Although the field effect mobility is mainly controlled by the front channel composition, V th is dominantly affected by the composition of the back channel. For instance, the use of an In-rich back channel that contains a large carrier concentration results in negatively shifted V th while a relatively In-poor back channel that contains a small carrier concentration doesnt. Also, the V th of an In-rich front channel device was near 0 V by applying an In-poor back channel. These results indicate that the adjustment of back channel carrier concentration and conductivity allows the control of V th in Hf-In-Zn-O devices.

Original languageEnglish
Pages (from-to)H147-H150
JournalJournal of the Electrochemical Society
Volume159
Issue number2
DOIs
StatePublished - 2012

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