A high-efficiency design for 2.0-2.9 GHz 5-W GaN HEMT Class-E power amplifier using passive Q-constant non-Foster network

Dang An Nguyen, Chulhun Seo, Kwang S. Park

Research output: Contribution to journalArticle

Abstract

A novel load network for designing a high-efficiency broadband Class-E power amplifier, ranging from 2.0 to 2.9 GHz (37% at the central frequency of 2.45 GHz), is proposed using a non-Foster cell that behaves as a negative capacitor with constant quality factor (Q) for optimal fundamental matching over the overall bandwidth. As mathematical analysis, the realization of this element is based on a passive architecture, which exhibits a negative group delay response without constraint of the reference impedance. To improve efficiency in a practical circuit, a close approximation using distributed sections is implemented. The in-band efficiency observed is around 69.0-78.3% with an average of 74% making it the highest for this frequency band today. The output power is maintained in the range of 5-8 W with 12-dB to 14-dB power gain over the band while the two first harmonics are suppressed below −49 dBc.

Original languageEnglish
Pages (from-to)615-624
Number of pages10
JournalMicrowave and Optical Technology Letters
Volume62
Issue number2
DOIs
StatePublished - 1 Feb 2020
Externally publishedYes

Fingerprint

High electron mobility transistors
power amplifiers
high electron mobility transistors
Power amplifiers
power gain
applications of mathematics
Group delay
Frequency bands
Q factors
capacitors
Capacitors
impedance
broadband
bandwidth
Bandwidth
harmonics
Networks (circuits)
output
cells
approximation

Keywords

  • Class-E power amplifier
  • distributed elements
  • GaN HEMT transistor
  • negative group delay
  • non-Foster capacitor

Cite this

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abstract = "A novel load network for designing a high-efficiency broadband Class-E power amplifier, ranging from 2.0 to 2.9 GHz (37{\%} at the central frequency of 2.45 GHz), is proposed using a non-Foster cell that behaves as a negative capacitor with constant quality factor (Q) for optimal fundamental matching over the overall bandwidth. As mathematical analysis, the realization of this element is based on a passive architecture, which exhibits a negative group delay response without constraint of the reference impedance. To improve efficiency in a practical circuit, a close approximation using distributed sections is implemented. The in-band efficiency observed is around 69.0-78.3{\%} with an average of 74{\%} making it the highest for this frequency band today. The output power is maintained in the range of 5-8 W with 12-dB to 14-dB power gain over the band while the two first harmonics are suppressed below −49 dBc.",
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A high-efficiency design for 2.0-2.9 GHz 5-W GaN HEMT Class-E power amplifier using passive Q-constant non-Foster network. / Nguyen, Dang An; Seo, Chulhun; Park, Kwang S.

In: Microwave and Optical Technology Letters, Vol. 62, No. 2, 01.02.2020, p. 615-624.

Research output: Contribution to journalArticle

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