20nm DRAM

A new beginning of another revolution

J. M. Park, Y. S. Hwang, Sang Wha Kim, S. Y. Han, J. S. Park, J. Kim, J. W. Seo, B. S. Kim, S. H. Shin, C. H. Cho, S. W. Nam, H. S. Hong, K. P. Lee, G. Y. Jin, E. S. Jung

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

17 Citations (Scopus)

Abstract

For the first time, 20nm DRAM has been developed and fabricated successfully without extreme ultraviolet (EUV) lithography using the honeycomb structure (HCS) and the air-spacer technology. The cell capacitance (Cs) can be increased by 21% at the same cell size using a novel low-cost HCS technology with one argon fluoride immersion (ArF-i) lithography layer. The parasitic bit-line (BL) capacitance is reduced by 34% using an air-spacer technology whose breakdown voltage is 30% better than that of conventional technology.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages26.5.1-26.5.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - 16 Feb 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 7 Dec 20159 Dec 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period7/12/159/12/15

Fingerprint

honeycomb structures
Dynamic random access storage
spacers
lithography
capacitance
Honeycomb structures
air
cells
electrical faults
submerging
fluorides
Capacitance
argon
Extreme ultraviolet lithography
Air
Electric breakdown
Lithography
Argon
Costs

Cite this

Park, J. M., Hwang, Y. S., Kim, S. W., Han, S. Y., Park, J. S., Kim, J., ... Jung, E. S. (2015). 20nm DRAM: A new beginning of another revolution. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 26.5.1-26.5.4). [7409774] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409774
Park, J. M. ; Hwang, Y. S. ; Kim, Sang Wha ; Han, S. Y. ; Park, J. S. ; Kim, J. ; Seo, J. W. ; Kim, B. S. ; Shin, S. H. ; Cho, C. H. ; Nam, S. W. ; Hong, H. S. ; Lee, K. P. ; Jin, G. Y. ; Jung, E. S. / 20nm DRAM : A new beginning of another revolution. 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 26.5.1-26.5.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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title = "20nm DRAM: A new beginning of another revolution",
abstract = "For the first time, 20nm DRAM has been developed and fabricated successfully without extreme ultraviolet (EUV) lithography using the honeycomb structure (HCS) and the air-spacer technology. The cell capacitance (Cs) can be increased by 21{\%} at the same cell size using a novel low-cost HCS technology with one argon fluoride immersion (ArF-i) lithography layer. The parasitic bit-line (BL) capacitance is reduced by 34{\%} using an air-spacer technology whose breakdown voltage is 30{\%} better than that of conventional technology.",
author = "Park, {J. M.} and Hwang, {Y. S.} and Kim, {Sang Wha} and Han, {S. Y.} and Park, {J. S.} and J. Kim and Seo, {J. W.} and Kim, {B. S.} and Shin, {S. H.} and Cho, {C. H.} and Nam, {S. W.} and Hong, {H. S.} and Lee, {K. P.} and Jin, {G. Y.} and Jung, {E. S.}",
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Park, JM, Hwang, YS, Kim, SW, Han, SY, Park, JS, Kim, J, Seo, JW, Kim, BS, Shin, SH, Cho, CH, Nam, SW, Hong, HS, Lee, KP, Jin, GY & Jung, ES 2015, 20nm DRAM: A new beginning of another revolution. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409774, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 26.5.1-26.5.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 7/12/15. https://doi.org/10.1109/IEDM.2015.7409774

20nm DRAM : A new beginning of another revolution. / Park, J. M.; Hwang, Y. S.; Kim, Sang Wha; Han, S. Y.; Park, J. S.; Kim, J.; Seo, J. W.; Kim, B. S.; Shin, S. H.; Cho, C. H.; Nam, S. W.; Hong, H. S.; Lee, K. P.; Jin, G. Y.; Jung, E. S.

2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 26.5.1-26.5.4 7409774 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceedingConference contributionResearchpeer-review

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Park JM, Hwang YS, Kim SW, Han SY, Park JS, Kim J et al. 20nm DRAM: A new beginning of another revolution. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 26.5.1-26.5.4. 7409774. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2015.7409774